• Product Brief
    INNOSLAB
  • Nano Second
    LASERs
  • Pico Second
    LASERs
Nano Second LASER
EdgeWave's short pulse lasers are diode-pumped and q-switched solid-state lasers, based on the unique INNOSLAB laser technology.
Our standard short pulse laser product encompasses electro-optical Q-switched INNOSLAB lasers with various laser medium, pulse energy and output power and a choice of wavelengths.
A distinguished and enabling feature of INNOSLAB lasers is the tailored beam profile: from circular Gaussian, through line shaped one dimensional Top-hat to square two dimensional Top-hat.

BX-SERIES

Special Features
beam quality: M² < 2
pulse energy up to 8mJ
pulse length down to 4ns
peak power up to 1MW
pulse rep. rate up to 150 kHz
average power up to 80W
wavelength 1064, 532, 355, 266nm
Applications
Favourable applications of BX-series are:
Photovoltaic, e.g. scribing, drilling and cutting of Si-wafer, ablation of conduction or dielectric layers of thin film solar and crystalline Si solar cells
Display, e.g. structuring of conduction layer, cutting of glass screen
Glass industry, e.g. micro drilling and high throughput subsurface engraving
Electronics industry, e.g. drilling and cutting of printed circuit boards
Tool making and mechanical engineering, e.g. 3D rapid prototyping via ablation

IS-SERIES

Special Features
beam quality: M² < 2
pulse energy up to 30mJ
pulse length down to 4ns
peak power up to 4MW
pulse rep. rate up to 150 kHz
average power up to 200W
wavelength 1064, 532, 355, 266nm
Applications
Photovoltaic, e.g. scribing, drilling and cutting of Si-wafer, ablation of conduction or dielectric layers of thin film solar and crystalline Si solar cells
Display, e.g. structuring of conduction layer, sequential lateral crystallization of Si, drilling and cutting of glass screen
Electronics industry, e.g. drilling and cutting of printed circuit boards
§Automobile industry, e.g. the manufacture of fuel injection valves
Tool making and mechanical engineering, e.g. 3D rapid prototyping via ablation
Scientific, e.g. pumping of dye laser, pumping of OPO and Ti:Saphire laser, particle imaging velocimetry

HD-SERIES

Special Features
beam quality: M² < 2
pulse energy up to 60mJ
pulse length down to 4ns
peak power up to 7MW
pulse rep. rate up to 150 kHz
average power up to 600W
wavelength 1064, 532, 355, 266nm
Applications
Photovoltaic, e.g. ablation of conduction or dielectric layers of thin film solar and crystalline Si solar cells
Display, e.g. structuring of conduction layer, sequential lateral crystallization of Si
Scientific, e.g. pumping of dye laser, pumping of OPO and Ti:Saphire laser, particle imaging velocimetry

DX-SERIES

Special Features
beam quality: M² < 2
pulse energy up to 60mJ
pulse length down to 4ns
peak power up to 7MW
pulse rep. rate up to 150 kHz
average power up to 400W
wavelength 1064, 532, 355, 266nm
Applications
Photovoltaic, e.g. ablation of conduction or dielectric layers of thin film solar and crystalline Si solar cells
Display, e.g. structuring of conduction layer, sequential lateral crystallization of Si
Scientific, e.g. pumping of dye laser, pumping of OPO and Ti:Saphire laser, particle imaging velocimetry